High power IGBT traction drives

Last updated on 27 September 2013 3:24
When the first 3,3kV-1200A IGBT transistors appeared on the market in 1997, nobody could imagine the place this component would take in high power traction drives. Today evidence is that the GTO thyristor is no more the semiconductor switch that equips the electric traction drives at the very beginning of...
Author(s): Debruyne Marc
Organisation(s): Alstom ;
2001
France
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